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| INFRARED DETECTOR PbS photoconductive detector P9217 series Room-temperature detectors capable of detecting up to 2.9 m P9217 is a PbS photoconductive detector with greatly improved stability and resistance to high temperatures as compared with conventional types. Features Applications l High reliability: high temperature resistant l Radiation thermometers l Flame monitors l Water content analyzers l Food ingredient analysis l Spectrophotometers Accessories (Optional) l Preamplifier for PbS/PbSe photoconductive detector C3757-02 s Specification/Absolute maximum ratings Di m e nsional O utline/ Package Wi nd o w m aterial * 1 /K /K /K /K Absolute maximum ratings Cooling Active area (mm) 1x5 2x2 3x3 4x5 Supply voltage (V) 100 Operating temperature Topr (C) -30 to +65 Storage temperature Tstg (C) -55 to +65 Type No. P9217 P9217-02 P9217-03 P9217-04 TO-5 TO-8 Non-cooled s Electrical and optical characteristics (Typ. unless otherwise noted) Peak Photo sensitivity *2 Cut-off sensitivity S wavelength wavelength =p c Vs=15 V p Min. Typ. (m) (m) (V/W) (V/W) D (500, 600, 1) D (p, 600, 1) Rise time tr 0 to 63 % Max. (s) 200 Dark resistance Rd Type No. Min. Typ. (cm*Hz1/2/W) (cm*Hz1/2/W) (cm*Hz1/2/W) P9217 4 x 104 1 x 105 P9217-02 5 x 104 5 x 108 1 x 109 1 x 1011 2.2 2.9 P9217-03 2 x 104 5 x 104 P9217-04 1 x 104 3 x 104 2 x 108 5 x 108 5 x 1010 *1: Window material K: Borosilicate glass *2: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance. (M) 0.05 to 1 0.25 to 2.5 0.2 to 2.0 1 PbS photoconductive detector s Spectral response 100 (Typ. T=25 C) P9217 series (Typ. Ta=25 C) 8 7 s S/N vs. supply voltage 800 80 600 SIGNAL 6 RELATIVE VALUE (%) SIGNAL (V) 60 400 NOISE 200 4 3 40 20 0 1 2 3 4 5 0 0 10 2 LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 4.8 W/cm2 1 CHOPPING FREQUENCY: 600 Hz FREQUENCY BANDWIDTH: 60 Hz 0 20 40 50 60 30 WAVELENGTH (m) KIRDB0301EA SUPPLY VOLTAGE (V) KIRDB0046EA If voltage of higher than 60 V is applied, the noise increases exponentially, degrading the S/N. The device should be operated at 60 V or less. s S/N vs. chopping frequency 10 (Typ. Ta=25 C) LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 4.8 W/cm2 SUPPLY VOLTAGE: 15 V tr: 200 s S/N s Photo sensitivity temperature characteristic 10 (Typ.) S 1 RELATIVE SENSITIVITY (%) RELATIVE S/N 1 N 0.1 1 10 LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 4.8 W/cm2 CHOPPING FREQUENCY: 600 Hz SUPPLY VOLTAGE: 15 V 0.1 -10 0 10 20 30 40 50 60 70 102 103 CHOPPING FREQUENCY (Hz) KIRDB0047EC ELEMENT TEMPERATURE (C) KIRDB0302EB Increasing the chopping frequency reduces the 1/f noise and results in an S/N improvement. The S/N can also be improved by narrowing the noise bandwidth using a lock-in amplifier. Cooling the device enhances its sensitivity, but the sensitivity also depends on the load resistance in the circuit. s Dark resistance, rise time temperature characteristics 10 (Typ.) s Photo sensitivity linearity 102 (Typ. Ta=25 C, FULLY ILLUMINATED) RISE TIME 101 RELATIVE VALUE (%) RELATIVE OUTPUT 100 1 DARK RESISTANCE 10-1 10-2 DEPENDENT ON NEP 0.1 -10 0 10 20 30 40 50 60 70 10-3 -9 10 10-8 10-7 10-6 10-5 10-4 ELEMENT TEMPERATURE (C) KIRDB0303EB INCIDENT ENERGY (W/cm2) KIRDB0050EA By making the incident light spot smaller than the active area, the upper limit of the linearity becomes lower. 2 NOISE (V) 5 PbS photoconductive detector s Dimensional outline (unit: mm) P9217/-02/-03 P9217-04 P9217 series 9.1 0.3 8.1 0.1 WINDOW 5.9 0.1 13.9 0.2 12.35 0.1 WINDOW 10.5 0.1 0.7 0.1 4.3 0.2 0.4 MAX. 18 MIN. 0.45 LEAD 5.1 0.2 0.45 LEAD CASE 7.5 0.2 1.5 MAX. CASE 0. 8 0. 1 KIRDA0166EB 0.5 MAX. 2.3 0.2 1 MAX. 15 1 PHOTOSENSITIVE SURFACE 2.3 0.2 PHOTOSENSITIVE SURFACE 4.9 0.2 45 HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1065E03 0. 8 0. 1 KIRDA0181EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2007 Hamamatsu Photonics K.K. Mar. 2007 DN |
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